04/2003 aws5523 0.5 to 2.5 ghz sp3t switch advanced product information - rev 0.2 d1 die features ? low insertion loss: 0.5 db at 2 ghz ? high isolation: > 25 db ? low harmonic levels: < -65 dbc at max. gsm power ? low control voltage operation: to +2.5 v applications ? front-end modules for gsm wireless handsets figure 1: block diagram product description the aws5523 is a single pole, three terminal (sp3t) rf switch developed to meet the stringent requirements of gsm systems. manufactured in anadigicss state-of-the-art phemt process, the device uses patent-pending circuit topologies to provide the low insertion loss, high port-to-port isolation and high linearity needed to enhance the performance of gsm radios. the aws5523 is offered as an unpackaged mmic die. rfc vs2 v3 rf3 rf3g v2 rf2 rf2g rf1g rf1 v1 vs1
2 advanced product information - rev 0.2 04/2003 aws5523 figure 2: die configuration dimensions in m. bond pads: 100 m x 75 m. die thickness: 178 m. no backside metal. table 1: pad description name v1 rf1 rfg1 rfg2 rf2 v2 description control voltage, rf path 1 rf port, path 1 ground ground rf port, path 2 control voltage, rf path 2 name rfg3 rf3 v3 vs2 rfc vs1 description ground rf port, path 3 control voltage, rf path 3 common port bias voltage (logic high) rf common port common port bias voltage (logic high) 1320 1100 rf2g rf2 v2 rf3g rf 3 v3 vs2 rfc vs1 v1 rf1 rf1g
advanced product information - rev 0.2 04/2003 3 aws5523 electrical characteristics table 2: absolute minimum and maximum ratings stresses in excess of the absolute ratings may cause permanent damage. functional operation is not implied under these conditions. exposure to absolute ratings for extended periods of time may adversely affect reliability. notes: (1) the vs1 and vs2 ports may remain open-circuited without damage to the device. (2) storage temperature limits apply to the die only after it has been removed from the anadigics shipping material. 3. the rf1, rf2, rf3 and rfc ports should be ac-coupled. no external dc bias should be applied. parameter common port bias voltage (v s ) control voltages (v 1 , v 2 , v 3 ) rf input power (p in ) storage temperature (2) min -0.2 -0.2 - -65 max +8.0 +8.0 10 +150 unit v v w c comments at vs1 or vs2 (1) at rf1, rf2, rf3 and rfc the device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. notes: (1) for optimal linearity performance, the common port bias voltage (v s ) should be set to the same control voltage used to turn on any of the individual rf paths. the vs1 and vs2 ports may remain open-circuited without damage to the device, but with some degradation in linearity. table 3: operating ranges parameter rf frequency (f) common port bias voltage (v s ) control voltages (v 1 , v 2 , v 3 ) ambient temperature (t a ) min 0.5 0 +2.5 -30 typ - (1) - - - max 2.5 +0.2 +3.5 +85 unit ghz v c comments applied at either vs1 or vs2 port rf path off state rf path on state
4 advanced product information - rev 0.2 04/2003 aws5523 table 5: switch control truth table control voltages rf path selection v 1 +2.5 to +3.5 v 0 to +0.2 v 0 to +0.2 v v 2 0 to +0.2 v +2.5 to +3.5 v 0 to +0.2 v v 3 0 to +0.2 v 0 to +0.2 v +2.5 to +3.5 v rfc - rf1 on off off rfc - rf2 off on off rfc - rf3 off off on table 4: electrical specifications (t a = +25 c; rf ports terminated with 50 ? ; v n = +2.7 v and is the control voltage for the on path, rfc-rfn; v x = 0 v and is the control voltage for the other two off paths, rfc-rfx) notes: (1) isolated rfx ports have a return loss of approximately -3 db. (2) for the cellular band, two tones with p in = +22.5 dbm each, at 837 and 838 mhz. for the pcs band, two tones with p in = +21 dbm each, at 1880 and 1881 mhz. parameter insertion loss 1 ghz 2 ghz return loss (1) 1 ghz 2 ghz isolation 1 ghz 2 ghz input third order intercept (2) 800 mhz cellular band 1900 mhz pcs band 2nd harmonic rejection 1 ghz 2 ghz 3rd harmonic rejection 1 ghz 2 ghz current consumption min - - - - 25 25 - - - - - - - - typ 0.4 0.5 -29 -23 27 27 +66 +59 -77 -77 -72 -75 - - max 0.6 0.8 -20 -15 - - - - -65 -65 -65 -65 30 5 unit db db db dbm dbc dbc a comments rfc port to selected rfn port rfc port and selected rfn port rfc port to isolated rfx ports rfc port to selected rfn port rfc port to selected rfn port p in = +34 dbm p in = +32 dbm rfc port to selected rfn port p in = +34 dbm p in = +32 dbm each vn port vs1 or vs2 port
advanced product information - rev 0.2 04/2003 5 aws5523 performance data figure 4: harmonics of 1 ghz vs. control voltage (on path, v x = 0 v, f = 1 ghz, p in = +34 dbm) figure 6: harmonics of 2 ghz vs. control voltage (on path, v x = 0 v, f = 2 ghz, p in = +32 dbm) figure 3: insertion loss vs. frequency (on path, v n = +2.7 v, v x = 0 v) figure 5: return loss vs. frequency (on path, v n = +2.7 v, v x = 0 v) figure 7: isolation vs. frequency (off path, v n = +2.7 v, v x = 0 v) -1.0 -0.8 -0.6 -0.4 -0.2 0.0 500 1000 1500 2000 2500 frequency (mhz) insertion loss (db) -40 -30 -20 -10 0 500 1000 1500 2000 2500 frequency (mhz) return loss (db) rfc port rfn port -40 -30 -20 -10 0 500 1000 1500 2000 2500 frequency (mhz) isolation (db) -100 -90 -80 -70 -60 -50 -40 -30 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 control voltage (v) harmonic level (dbc) 2nd harmonic, vs open 2nd harmonic, vs = vn 3rd harmonic, vs open 3rd harmonic, vs = vn -100 -90 -80 -70 -60 -50 -40 -30 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 control voltage (v) harmonic level (dbc) 2nd harmonic, vs open 2nd harmonic, vs = vn 3rd harmonic, vs open 3rd harmonic, vs = vn
6 advanced product information - rev 0.2 04/2003 aws5523 application information figure 8: application schematic die applications bonding and circuit connections for the unpackaged aws5523 die are shown in figure 8, and application details are listed in the following notes: 1. cb are dc blocking capacitors external to the device. a value of 100pf is sufficient for operation to 500mhz. the values may be tailored to provide specific electrical responses. the isolation of the switch provides enough decoupling of rf ports 1 through 3 so that overall switch performance is not affected. 2. the vs1 and vs2 pins provide a fixed voltage potential to the common port of the switch. to get the best linear performance, either vs1 or vs2 must be tied to the logic high voltage potential (not the power supply). only one of the pins need be attached, with the decision determined by external circuit layout. currentdraw on this pin is less than 5 a. 3. the rf ground bondwires should be keep short as possible and bonded directly to a good rf ground for best broadband performance. 4. l esd provides a means to increase the esd protection on a specific rf port, typically the port attached to the antenna. the esd rating of the device is 125v hbm overall. this rating is associated with the control pin to rf port path. rf port to rf port/rf gnd has been determined to be > 500v hbm for this technology. by using l esd as an rf choke on a port, an esd protection to 8kv contact discharge can be achieved. 5. the die may be attached by either conductive or non-conductive epoxy formulated for attaching semiconductor parts. the back of the die is electrically isolated from the switch circuit and can be grounded or left isolated. rfc vs2 v3 rf3 rf3g v2 rf2 rf2g rf1g rf1 v1 vs1 common (ant.) rf port control pin, rf path 3 rf port 3 rf gnd, path 3 shunt control pin, rf path 2 control pin, rf path 1 rf gnd, path 2 shunt rf gnd, path 1 shunt rf port 2 rf port 1 common port supply note 2 (logic high) c b c b c b c b l esd note 4 keep rf gnd bondwires short 3 places, note 3
advanced product information - rev 0.2 04/2003 7 aws5523 notes
warning anadigics products are not intended for use in life support appliances, devices or systems. use of an anadigics product in any such application without written consent is prohibited. important notice anadigics, inc. 141 mount bethel road warren, new jersey 07059, u.s.a. tel: +1 (908) 668-5000 fax: +1 (908) 668-5132 url: http://www.anadigics.com e-mail: mktg@anadigics.com anadigics, inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. the product specifications contained in advanced product information sheets and preliminary data sheets are subject to change prior to a products formal introduction. information in data sheets have been carefully checked and are assumed to be reliable; however, anadigics assumes no responsibilities for inaccuracies. anadigics strongly urges customers to verify that the information they are using is current before placing orders. advanced product information - rev 0.2 04/2003 8 aws5523 ordering information order number AWS5523D1 temperature range -30 c to +85 c package description die component packaging (contact anadigics for details)
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